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Volumn 64, Issue 5, 1988, Pages 2434-2438

An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors

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EID: 36549098783     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.341678     Document Type: Article
Times cited : (56)

References (25)
  • 19
    • 84952859038 scopus 로고    scopus 로고
    • See, for example, Figs. 2 and 5 of Ref. 6, which give the C-V curve and [formula omitted] signal intensity, respectively, as a function of gate voltage. Those figures demonstrate that the maximum [formula omitted] signal intensity is obtained when the Fermi level at the silicon surface is slightly below the midpoint of the silicon band gap, corresponding to a value near inversion on the capacitance-voltage curve.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.