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Journal of Applied Physics

Volumn 58, Issue 3, 1985, Pages 1240-1247

Dielectric isolation of silicon by anodic bonding

(1) Anthony, Thomas R a

a GE GLOBAL RESEARCH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549096828 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.336143 Document Type: Article

Times cited : (72)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.