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Volumn 52, Issue 23, 1988, Pages 1976-1978

Heteroepitaxy of GaAs on Si: The effect of in situ thermal annealing under AsH3

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Indexed keywords


EID: 36549093752     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.99595     Document Type: Article
Times cited : (37)

References (18)
  • 18
    • 84950913767 scopus 로고    scopus 로고
    • There is usually around 1 to 2 meV difference between the energies of DAP and electron-acceptor band positions in GaAs.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.