-
2
-
-
0000015076
-
-
(1985)
J. Appl. Phys
, vol.58
, pp. 374
-
-
Fisher, R.1
Masselink, W.T.2
Klem, J.3
Henderson, T.4
McGlinn, T.C.5
Klein, M.V.6
Morkoç, K.7
Mazur, J.H.8
Washburn, J.9
-
9
-
-
0345488619
-
-
(1987)
Appl. Phys. Lett
, vol.51
, pp. 682
-
-
Pearton, S.J.1
Malm, D.L.2
Heimbrook, L.A.3
Kovalchick, J.4
Abernathy, C.R.5
Caruso, R.6
Vernon, S.M.7
Heaven, V.E.8
-
10
-
-
84950875750
-
-
Int. Symp. GaAs and Related Compounds, Las Vegas, Nevada, 1986
-
-
-
Zemon, S.1
Jagannath, C.2
Koteles, E.S.3
Shastry, S.K.4
Norris, P.5
Lambert, G.6
Choudhury, A.N.M.7
Armiento, C.A.8
-
11
-
-
84950836134
-
-
(Editions de Physique, Paris), Vol. XVI.
-
(1987)
EMRS Meeting, June 1987
, pp. 337-342
-
-
Freundlich, A.1
Basmadji, P.2
Grenet, J.C.3
Leycuras, A.4
Gibart, P.5
Vèrié, C.6
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18
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-
84950913767
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There is usually around 1 to 2 meV difference between the energies of DAP and electron-acceptor band positions in GaAs.
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