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Volumn 64, Issue 1, 1988, Pages 315-322

Mechanisms of sputtering of Si in a Cl2 environment by ions with energies down to 75 eV

Author keywords

[No Author keywords available]

Indexed keywords


EID: 36549092617     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.341429     Document Type: Article
Times cited : (57)

References (53)
  • 28
    • 84950816103 scopus 로고    scopus 로고
    • Proceedings of the Meeting of The Electrochemical Society, San Diego, 1986, Extended abstracts, Vol. 86-2
    • Coburn, J.W.1    Köhler, K.2
  • 35
    • 0011282630 scopus 로고
    • In a paper on laser-induced etching of Si with chlorine, features could be explained by assuming that [formula omitted] fragments 67% into [formula omitted] Our results do not confirm this. Comparing Figs. 5(c) and 7(a) shows that, under [formula omitted] ion bombardment, there is not a significant contribution of [formula omitted] in the time-of-flight spectrum of SiCl obtained at mass setting [formula omitted] Hence, the fragmentation of [formula omitted] into [formula omitted] is negligible. The same conclusion is obtained for [formula omitted] ion bombardment. An analysis of the time-of-ffight spectrum of [formula omitted] (not shown here) proves that [formula omitted] does not contribute to the time-of-flight spectrum of SiCl at mass setting [formula omitted] (Fig. 8).
    • (1986) J. Appl. Phys , vol.60 , pp. 2321
  • 37
    • 84950906710 scopus 로고
    • Ph.D. thesis, University of Amsterdam and FOM-Institute for Atomic and Molecular Physics, Amsterdam, The Netherlands, December.
    • (1987)
    • de Jonge, R.1
  • 40
    • 84950844801 scopus 로고
    • Ph.D. thesis, Leiden University and FOM Amsterdam, The Netherlands.
    • (1984)
    • Haring, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.