Paired FinFET charge trap flash memory for vertical high density storage

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 84-85

  Kim, Sukpil ^a   Kim, Wonjoo ^a   Hyun, Jaewoong ^a   Byun, Sungjae ^a   Koo, Junemo ^a   Lee, Junghoon ^a   Cho, Kyounglae ^a   Lim, Seongtaek ^a   Park, Jongbong ^a   Yoo, In Kyeong ^a   Lee, Choong Ho ^b   Park, Donggun ^b   Park, Yoondong ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRIC INSULATORS; FIELD EFFECT TRANSISTORS; NAND CIRCUITS;

SONOS DEVICES; VERTICAL HIGH DENSITY STORAGE;

FLASH MEMORY;

EID: 36549087592     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. P. Xuan, et al., "FinFET SONOS flash memory for embedded applications," Technical Digest of IEDM, P.26.4.1, 2003.
2. C.W. Oh, et al., "Damascene Gate FinFET SONOS Memory Implemented on Bulk Silicon Wafer," Technical Digest of IEDM, P.36.6.1, 2004