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Applied Physics Letters

Volumn , Issue , 1995, Pages 2882-

Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

(5) Hegde, Rama I a Tobin, Philip J a Reid, Kimberly G a Maiti, Bikas a Ajuria, Sergio A a

a MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449009207 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.113461 Document Type: Article

Times cited : (137)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.