Elimination of secondary defects in preamorphized Si by C+ implantation

Applied Physics Letters

Volumn 62, Issue 3, 1993, Pages 303-305

  Nishikawa, Satoshi ^a   Yamaji, Tetsuo ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449009125     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.108968     Document Type: Article

References (9)