Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen source

Applied Physics Letters

Volumn , Issue , 1995, Pages 3617-

  Sato, Hitoshi ^a   Takahashi, Hirokazu ^a   Watanabe, Atsushi ^a   Ota, Hiroyuki ^a  

^a PIONEER CORPORATION   (Japan)

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EID: 36449009114     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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