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Applied Physics Letters

Volumn 64, Issue 23, 1994, Pages 3124-3126

High hole mobility in SiGe alloys for device applications

(3) Ismail, K a Chu, J O a Meyerson, B S a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449008939 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.111367 Document Type: Article

Times cited : (144)

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