Fabrication of 15 nm wide trenches in Si by vacuum scanning tunneling microscope lithography of an organosilane self-assembled film and reactive ion etching

Applied Physics Letters

Volumn , Issue , 1995, Pages 550-

  Perkins, F Keith ^a   Dobisz, Elizabeth A ^a   Brandow, Susan L ^a   Calvert, Jeffrey M ^a   Kosakowski, John E ^b   Marrian, Christie R K ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

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EID: 36449008443     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116396     Document Type: Article

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