Fabrication of 0.1 μm metal oxide semiconductor field-effect transistors with the atomic force microscope

Applied Physics Letters

Volumn , Issue , 1995, Pages 703-

  Minne, S C ^a   Soh, H T ^a   Flueckiger, Ph ^a   Quate, C F ^a  

^a STANFORD UNIVERSITY   (United States)

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EID: 36449008120     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.114105     Document Type: Article

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