In situ arsenic-doped polycrystalline silicon as a low thermal budget emitter contact for Si/Si1-xGex heterojunction bipolar transistors

Applied Physics Letters

Volumn , Issue , 1995, Pages 226-

  King, C A ^a   Johnson, R W ^a   Pinto, M R ^a   Luftman, H S ^a   Munanka, J ^a  

^a NONE

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EID: 36449006459     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)