Atomistic simulation of point defects in silicon at high temperature

Applied Physics Letters

Volumn , Issue , 1995, Pages 3028-

  Sinno, Talid ^a   Jiang, Z Kurt ^a   Brown, Robert A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

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[No Author keywords available]

Indexed keywords

EID: 36449006306     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115566     Document Type: Article

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