Intrinsic carrier concentration and minority-carrier mobility of silicon from 77 to 300 K

Journal of Applied Physics

Volumn 73, Issue 3, 1993, Pages 1214-1225

  Sproul, A B ^a   Green, M A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449005674     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.353288     Document Type: Article

References (37)

1. The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-doped Silicon