Comparison of thermally oxidized metal-oxide-semiconductor interfaces on 4H and 6H polytypes of silicon carbide

Applied Physics Letters

Volumn , Issue , 1995, Pages 803-

  Shenoy, Jayarama N ^a   Cooper Jr , James A ^a   Melloch, Michael R ^a  

^a PURDUE UNIVERSITY   (United States)

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EID: 36449005391     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116538     Document Type: Article

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