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Applied Physics Letters

Volumn 66, Issue , 1995, Pages 2329-

Two-dimensional infrared photonic band gap structure based on porous silicon

(3) Gruning U a Lehmann, V a Engelhardt, C M b

a SIEMENS AG (Germany)

b WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449005318 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (18)

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