Heavily doped p-ZnSe:N grown by molecular beam epitaxy

Applied Physics Letters

Volumn 59, Issue 23, 1991, Pages 2992-2994

  Qiu, J ^a   DePuydt, J M ^a   Cheng, H ^a   Haase, M A ^a  

^a 3M COMPANY   (United States)

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EID: 36449004990     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.105821     Document Type: Article

References (10)