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Applied Physics Letters

Volumn 65, Issue 3, 1994, Pages 324-326

Diffusion of ion implanted Sn in Si, Si1-xGex, and Ge

(2) Kringhoj, Per a Elliman, Robert G a

a AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449004823 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.112360 Document Type: Article

Times cited : (34)

References (15)

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9
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10
- 84951893779
- (unpublished)
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15
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- A linear dependence between activation energy and Ge content results in an exponential dependence for the diffusion coefficient if the pre-exponential factor, [formula omitted] is independent of the Ge content

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