Influence of the As overpressure during the molecular beam epitaxy growth of Si-doped (211)A and (311)A GaAs

Applied Physics Letters

Volumn , Issue , 1995, Pages 2846-

  Pavesi, L ^a   Henini, M ^b   Johnston, D ^b  

^a UNIVERSITY OF TRENTO   (Italy)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

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EID: 36449004467     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.113449     Document Type: Article

References (14)