Low temperature selective silicon epitaxy by ultra high vacuum rapid thermal chemical vapor deposition using Si2H6, H 2 and Cl2

Applied Physics Letters

Volumn , Issue , 1995, Pages 66-

  Violette, Katherine E ^a   O'Neil, Patricia A ^a   Öztürk, Mehmet C ^a   Christensen, Kim ^a   Maher, Dennis M ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

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EID: 36449004239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116759     Document Type: Article

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