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Journal of Applied Physics

Volumn 77, Issue 12, 1995, Pages 6194-6200

Empirical depth profile simulator for ion implantation in 6Hα-SiC

(4) Ahmed, S a Barbero, C J a Sigmon, T W a Erickson, J W b

a OREGON HEALTH AND SCIENCE UNIVERSITY (United States)

b CHARLES EVANS AND ASSOCIATES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449003822 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.359146 Document Type: Article

Times cited : (37)

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