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Volumn 62, Issue 2, 1993, Pages 131-133

Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures

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[No Author keywords available]

Indexed keywords


EID: 36449003753     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.109348     Document Type: Article
Times cited : (410)

References (15)
  • 9
    • 0001648862 scopus 로고
    • For our double heterostructures the cross-over point in injection level from diode quality [formula omitted] to diode quality [formula omitted] is estimated to be at [formula omitted] relying on parameters from
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 2241
    • Yablonovitch, E.1    Gmitter, T.J.2    Bagley, B.G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.