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Journal of Applied Physics

Volumn 77, Issue 2, 1995, Pages 837-842

Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si

(6) Itoh, Hisayoshi a Yoshikawa, Masahito a Nashiyama, Isamu a Okumura, Hajime b Misawa, Shunji b Yoshida, Sadafumi b

a JAPAN ATOMIC ENERGY AGENCY (Japan)

b ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449003552 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.359008 Document Type: Article

Times cited : (71)

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