Epitaxial growth of 3C-SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

Journal of Applied Physics

Volumn 78, Issue 8, 1995, Pages 5136-5138

  Zorman, Christian A ^a   Fleischman, Aaron J ^a   Dewa, Andrew S ^a   Mehregany, Mehran ^a   Jacob, Chacko ^a   Nishino, Shigehiro ^a   Pirouz, Pirouz ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

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Indexed keywords

EID: 36449003431     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.359745     Document Type: Article

References (8)