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Volumn 76, Issue 12, 1994, Pages 8186-8188

Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si

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[No Author keywords available]

Indexed keywords


EID: 36449003367     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.357871     Document Type: Article
Times cited : (9)

References (35)
  • 29
    • 84951344683 scopus 로고    scopus 로고
    • The ions have essentially thermal kinetic energy and thus do not damage the oxides


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.