The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 75, Issue 10, 1994, Pages 5367-5371

  Wickenden, A Estes ^a   Wickenden, D K ^a   Kistenmacher, T J ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449003366     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.355740     Document Type: Article

References (19)