Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn , Issue , 1995, Pages 2392-

  Huang, J W ^a   Kuech, T F ^a   Lu, Hongqiang ^b   Bhat, Ishwara ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

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EID: 36449002118     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116144     Document Type: Article

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