Influence of ion bombardment on Si and SiGe films during molecular beam epitaxy growth

Applied Physics Letters

Volumn , Issue , 1995, Pages 238-

  Ni, W X ^a   Hansson, G V ^a   Buyanova, I A ^a   Henry, A ^a   Chen, W M ^a   Momemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

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EID: 36449001554     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116472     Document Type: Article

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