High transconductance heterostructure field-effect transistors based on AlGaN/GaN

Applied Physics Letters

Volumn , Issue , 1995, Pages 794-

  Chen, Q ^a   Asif Khan, M ^a   Yang, J W ^a   Sun, C J ^a   Shur, M S ^b   Park, H ^c  

^a APA Optronics   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

^c Dongguk University   (South Korea)

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EID: 36449001491     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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