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Applied Physics Letters

Volumn 66, Issue , 1995, Pages 2490-

Atomic diffusion-induced deep levels near ZnSe/GaAs(100) interfaces

(5) Raisanen, A D a Brillson, L J a Vanzetti, L b,c Bonanni, A b,c Franciosi, A b,c

a XEROX CORPORATION (United States)

b LABORATORIO TASC (Italy)

c UNIVERSITY OF MINNESOTA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449000318 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.113737 Document Type: Article

Times cited : (34)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.