Nonequilibrium characteristics of the gate-controlled diode in 6H-SiC

Journal of Applied Physics

Volumn 75, Issue 6, 1994, Pages 3205-3207

  Sheppard, S T ^a   Cooper Jr , J A ^a   Melloch, M R ^a  

^a PURDUE UNIVERSITY   (United States)

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[No Author keywords available]

Indexed keywords

EID: 36449000183     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.357017     Document Type: Article

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