Growth of 6H-SiC on 6H-SiC(0001) by migration enhanced epitaxy controlled to an atomic level using surface superstructures

Applied Physics Letters

Volumn , Issue , 1995, Pages 1204-

  Fissel, Andreas ^a   Kaiser, Ute ^a   Pfennighaus, Kay ^a   Schröter, Bernd ^a   Richter, Wolfgang ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

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EID: 36449000052     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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