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Volumn , Issue , 1995, Pages 448-

Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy

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EID: 36448999756     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.114052     Document Type: Article
Times cited : (34)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.