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Applied Physics Letters
Volumn 66, Issue , 1995, Pages 3573-
Growth and composition of covalent carbon nitride solids
(3)
Zhang, Z John
a
Fan, Shoushan
a
Lieber, Charles M
a
a
HARVARD UNIVERSITY
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
36448999356
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.113794
Document Type
:
Article
Times cited : (
117
)
References (
23
)
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4
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84950583289
Film growth at a fluence below 0.8 J/cm2 (532 nm) is irreproducible since the carbon deposition rate by ablation becomes comparable to the atomic nitrogen induced etching rate
19
30844455436
(1988)
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1
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2
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84950583288
The small oxygen contamination peak at ∼0.72 MeV [e.g., Fig. 2(a)] corresponds to only surface oxide layer on the film
21
84950583290
Composition results are reported for thick films since the homogeneity and purity can be reliably assessed in these materials. Higher nitrogen compositions (up to 58%) have been observed in thin (0.1 μm) films; however, in these films we believe that impurities at the substrate/film interface contribute to the measured nitrogen composition (Z. J. Zhang and C. M. Lieber, unpublished results)
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, vol.6
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.