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Volumn 78, Issue 7, 1995, Pages 4573-4583

Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level

(3) Kittler, M a Ulhaq Bouillet, C a Higgs, V b

a IHP (Germany)

b KING'S COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36448999240 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.359802 Document Type: Article

Times cited : (108)

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