Charge collection properties of Monolithic Active Pixel Sensors (MAPS) irradiated with non-ionising radiation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 583, Issue 1, 2007, Pages 134-138

  Deveaux, M ^a,b   Amar, S ^a   Besson, A ^b   Baudot, J ^b   Claus, G ^b   Colledani, C ^b   Deptuch, G ^c   Dorokhov, A ^b   Dulinski, W ^b   Goffe, M ^b   Gornushkin, Y ^d   Grandjean, D ^b   Heini, S ^b   Himmi, A ^b   Hu, C ^b   Jaaskelainen, K ^b   Muntz C ^a   Shabetai, A ^b   Szelezniak, M ^b   Stroth, J ^a   Valin, I ^b   Winter, M ^b   more..

^a GOETHE UNIVERSITY   (Germany)

^b IPHC   (France)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

^d JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

CMOS; MAPS; Monolithic Active Pixel Sensors; Radiation hardness

Indexed keywords

DAMAGE DETECTION; IRRADIATION; RADIATION HARDENING; SENSORS;

COMPRESSED BARYONIC MATTER (CBM); INTERNATIONAL LINEAR COLLIDER (ILC); MONOLITHIC ACTIVE PIXEL SENSORS; RADIATION HARDNESS;

PIXELS;

EID: 36448987179     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.08.189     Document Type: Article

References (3)

1. Deveaux M., et al. Nucl. Instr. and Meth. A 512 (2003) 71
2. Gornushkin Yu., et al. Nucl. Instr. and Meth. A 478 (2002) 311
3. Velthuis J., et al. IEEE Trans. Nucl. Sci. NS-52 (2005) 1887