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Volumn 27, Issue 2, 1998, Pages 91-95

Etching of oxide films of semicondicting materials in an atomic hydrogen flow

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EID: 3643141176     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (15)
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  • 2
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  • 3
    • 0342824861 scopus 로고
    • Summary Abstract: Surface-Etching Kinetics of Hydrogen Plasma on III-V Compound Semiconductors
    • Tu, C.W., Chang, R.P.H., and Schlier, A.R., Summary Abstract: Surface-Etching Kinetics of Hydrogen Plasma on III-V Compound Semiconductors, J. Vac. Sci. Technol., A, 1983, vol. 1, no. 2, pp. 637-638.
    • (1983) J. Vac. Sci. Technol., A , vol.1 , Issue.2 , pp. 637-638
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  • 4
    • 0026124817 scopus 로고
    • Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation
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  • 5
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    • Suemune, I.1    Kinitsugu, Y.2    Kan, Y.3    Yamanishi, M.4
  • 6
    • 0000788154 scopus 로고
    • In Situ Cleaning of GaAs surface Using Hydrogen Dissociated with a Remote Noble-Gas Discharge
    • Hattangady, S.V., Rudder, R.A., Mantini, M.J., Fountain, G.G., and Posthill, J.B., In Situ Cleaning of GaAs surface Using Hydrogen Dissociated with a Remote Noble-Gas Discharge, J. Appl. Phys., 1990, vol. 68, no. 3, pp. 1233-1236.
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  • 7
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    • RF Inventor's Certificate no. 93026207/07 (025856)
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    • Kagadei, V.A.1    Proskurovskii, D.I.2    Troyan, O.E.3
  • 12
    • 0004413476 scopus 로고
    • Existence of Threshold Density in Silicon Surface Cleaning Using Hydrogen Electron Cyclotron Resonance Plasma
    • Nakashima, K., Ishii, M., Tajima, I., and Yamamoto, M., Existence of Threshold Density in Silicon Surface Cleaning Using Hydrogen Electron Cyclotron Resonance Plasma, Appl. Phys. Lett., 1991, vol. 58, no. 23, pp. 2662-2665.
    • (1991) Appl. Phys. Lett. , vol.58 , Issue.23 , pp. 2662-2665
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  • 14
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    • Temperature-dependent Dry Cleaning Characteristics of GaAs(111)B Surface with a Hydrogen Electron Cyclotron Resonance Plasma
    • Weegels, L.M., Saitoh, T., and Kanbe, H., Temperature-dependent Dry Cleaning Characteristics of GaAs(111)B Surface with a Hydrogen Electron Cyclotron Resonance Plasma, Appl. Phys. Lett., 1995, vol. 66, no. 21, pp. 2870-2872.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.