-
1
-
-
0000987832
-
In Situ Cleaning of Silicon Substrate Surfaces by Remote Plasma-excited Hydrogen
-
Anthony, B., Breaux, L., Hsu, T., Banerjee, S., and Tash, A., In Situ Cleaning of Silicon Substrate Surfaces by Remote Plasma-excited Hydrogen, J. Vac. Sci. Technol., B, 1989, vol. 7, no. 4, pp. 621-626.
-
(1989)
J. Vac. Sci. Technol., B
, vol.7
, Issue.4
, pp. 621-626
-
-
Anthony, B.1
Breaux, L.2
Hsu, T.3
Banerjee, S.4
Tash, A.5
-
2
-
-
0042028062
-
Real-Time Investigations of GaAs Surface Cleaning with a Hydrogen Electron Cyclotron Resonance Plasma by Optical Reflection Spectroscopy
-
Weegels, L.M., Saitoh, T., and Kanbe, H., Real-Time Investigations of GaAs Surface Cleaning with a Hydrogen Electron Cyclotron Resonance Plasma by Optical Reflection Spectroscopy, Appl. Phys. Lett., 1994, vol. 65, no. 24, pp. 3117-3119.
-
(1994)
Appl. Phys. Lett.
, vol.65
, Issue.24
, pp. 3117-3119
-
-
Weegels, L.M.1
Saitoh, T.2
Kanbe, H.3
-
3
-
-
0342824861
-
Summary Abstract: Surface-Etching Kinetics of Hydrogen Plasma on III-V Compound Semiconductors
-
Tu, C.W., Chang, R.P.H., and Schlier, A.R., Summary Abstract: Surface-Etching Kinetics of Hydrogen Plasma on III-V Compound Semiconductors, J. Vac. Sci. Technol., A, 1983, vol. 1, no. 2, pp. 637-638.
-
(1983)
J. Vac. Sci. Technol., A
, vol.1
, Issue.2
, pp. 637-638
-
-
Tu, C.W.1
Chang, R.P.H.2
Schlier, A.R.3
-
4
-
-
0026124817
-
Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation
-
Sugaya, T. and Kawabe, M., Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation, Jpn. J. Appl. Phys., 1991, vol. 30, no. 3A, pp. L402-L404.
-
(1991)
Jpn. J. Appl. Phys.
, vol.30
, Issue.3 A
-
-
Sugaya, T.1
Kawabe, M.2
-
5
-
-
36549095765
-
Incidence Angle Effect of a Hydrogen Plasma Beam for the Cleaning of Semiconductor Surfaces
-
Suemune, I., Kinitsugu, Y., Kan, Y., and Yamanishi, M., Incidence Angle Effect of a Hydrogen Plasma Beam for the Cleaning of Semiconductor Surfaces, Appl. Phys. Lett., 1989, vol. 55, no. 8, pp. 760-762.
-
(1989)
Appl. Phys. Lett.
, vol.55
, Issue.8
, pp. 760-762
-
-
Suemune, I.1
Kinitsugu, Y.2
Kan, Y.3
Yamanishi, M.4
-
6
-
-
0000788154
-
In Situ Cleaning of GaAs surface Using Hydrogen Dissociated with a Remote Noble-Gas Discharge
-
Hattangady, S.V., Rudder, R.A., Mantini, M.J., Fountain, G.G., and Posthill, J.B., In Situ Cleaning of GaAs surface Using Hydrogen Dissociated with a Remote Noble-Gas Discharge, J. Appl. Phys., 1990, vol. 68, no. 3, pp. 1233-1236.
-
(1990)
J. Appl. Phys.
, vol.68
, Issue.3
, pp. 1233-1236
-
-
Hattangady, S.V.1
Rudder, R.A.2
Mantini, M.J.3
Fountain, G.G.4
Posthill, J.B.5
-
7
-
-
3643145056
-
-
RF Inventor's Certificate no. 93026207/07 (025856)
-
Kagadei, V.A., Proskurovskii, D.I., and Troyan, O.E., RF Inventor's Certificate no. 93026207/07 (025856), 1993.
-
(1993)
-
-
Kagadei, V.A.1
Proskurovskii, D.I.2
Troyan, O.E.3
-
8
-
-
3643139875
-
Exhaustive Cryoadsorptive Hydrogen Purification
-
Morozov, V.S., Yakovlev, Yu.A., Boguslavskii, S.V., Shishimarov, A.A., Gladkikh, P.A., Belyaev, I.A., and Sal'nikov, M.A., Exhaustive Cryoadsorptive Hydrogen Purification, Elektron. Prom-st., 1991, no. 4, pp. 79-80.
-
(1991)
Elektron. Prom-st.
, Issue.4
, pp. 79-80
-
-
Morozov, V.S.1
Yakovlev, Yu.A.2
Boguslavskii, S.V.3
Shishimarov, A.A.4
Gladkikh, P.A.5
Belyaev, I.A.6
Sal'nikov, M.A.7
-
10
-
-
0347102927
-
-
Moscow: Radio i Svyaz'
-
Kireev, I.Yu., Danilin, B.S., and Kuznetsov, V.I., Plazmokhimicheskoe i ionno-khimicheskoe travlenie mikrostruktur (Plasmochemical and Ion Chemical Etching of Microstructures), Moscow: Radio i Svyaz', 1983.
-
(1983)
Plazmokhimicheskoe i Ionno-khimicheskoe Travlenie Mikrostruktur (Plasmochemical and Ion Chemical Etching of Microstructures)
-
-
Kireev, I.Yu.1
Danilin, B.S.2
Kuznetsov, V.I.3
-
11
-
-
3643098140
-
Plasmochemical and Ion Chemical Etching of III-V Semiconductors
-
1487
-
Svettsov, V.I., Danilov, N.G., and Chesnokova, T.A., Plasmochemical and Ion Chemical Etching of III-V Semiconductors, Obz. Elektron. Tekh., Ser. 6, 1989, no. 6(1487).
-
(1989)
Obz. Elektron. Tekh., Ser. 6
, Issue.6
-
-
Svettsov, V.I.1
Danilov, N.G.2
Chesnokova, T.A.3
-
12
-
-
0004413476
-
Existence of Threshold Density in Silicon Surface Cleaning Using Hydrogen Electron Cyclotron Resonance Plasma
-
Nakashima, K., Ishii, M., Tajima, I., and Yamamoto, M., Existence of Threshold Density in Silicon Surface Cleaning Using Hydrogen Electron Cyclotron Resonance Plasma, Appl. Phys. Lett., 1991, vol. 58, no. 23, pp. 2662-2665.
-
(1991)
Appl. Phys. Lett.
, vol.58
, Issue.23
, pp. 2662-2665
-
-
Nakashima, K.1
Ishii, M.2
Tajima, I.3
Yamamoto, M.4
-
13
-
-
0000073976
-
In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces
-
Kishimoto, A., Suemune, I., Hamaoka, K., Koui, T., Honda, Y., and Yamanishi, M., In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces, Jpn. J. Appl. Phys., 1990, vol. 29, no. 10, pp. 2273-2276.
-
(1990)
Jpn. J. Appl. Phys.
, vol.29
, Issue.10
, pp. 2273-2276
-
-
Kishimoto, A.1
Suemune, I.2
Hamaoka, K.3
Koui, T.4
Honda, Y.5
Yamanishi, M.6
-
14
-
-
36449009380
-
Temperature-dependent Dry Cleaning Characteristics of GaAs(111)B Surface with a Hydrogen Electron Cyclotron Resonance Plasma
-
Weegels, L.M., Saitoh, T., and Kanbe, H., Temperature-dependent Dry Cleaning Characteristics of GaAs(111)B Surface with a Hydrogen Electron Cyclotron Resonance Plasma, Appl. Phys. Lett., 1995, vol. 66, no. 21, pp. 2870-2872.
-
(1995)
Appl. Phys. Lett.
, vol.66
, Issue.21
, pp. 2870-2872
-
-
Weegels, L.M.1
Saitoh, T.2
Kanbe, H.3
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