Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

Physical Review Letters

Volumn 64, Issue 16, 1990, Pages 1943-1946

  Eaglesham, D J ^a   Cerullo, M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3643130905     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.64.1943     Document Type: Article

References (25)

1. Phänomenologische Theorie der Kristallabscheidung an Oberflächen. I
2. One-Dimensional Dislocations. I. Static Theory
3. Accommodation of misfit across the interface between single-crystal films of various face-centred cubic metals
4. The growth and structure of gold and silver deposits formed by evaporation inside an electron microscope
5. Heteroepitaxy of germanium thin films on silicon by ion sputtering
6. Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy Using GeH4
7. Pseudomorphic deposits of cobalt on copper