An advanced 0.4 mu m BiCMOS technology for high performance ASIC applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 97-100

  Kirchgessner, J ^a   Teplik, J ^a   Ilderem, V ^a   Morgan, D ^a   Parmar, R ^a   Wilson, S R ^a   Freeman, J ^a   Tracy, C ^a   Cosentino, S ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; POLYCRYSTALLINE MATERIALS; POLYSILICON; RECONFIGURABLE HARDWARE; SILICIDES; STATIC RANDOM ACCESS STORAGE;

ASIC APPLICATION; BASE STRUCTURE; CMOS CIRCUITS; EFFECTIVE CHANNEL LENGTH; EMITTER COUPLED LOGIC; POLYSILICON EMITTER; SUPPLY VOLTAGES; TRENCH ISOLATION;

APPLICATION SPECIFIC INTEGRATED CIRCUITS;

EID: 3643097755     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235415     Document Type: Conference Paper

References (0)