Reduction of selectivity loss probability on dielectric surface during chemical vapor deposition of tungsten using fluorinated oxide and removing silanol units on dielectric surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6555-6561

  Chang, Kow Ming ^a   Wang, Shih Wei ^a   Li, Chii Horng ^a   Tsai, Jung Yu ^a   Yeh, Ta Hsun ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

BPSG; CVD of W; Electronegativity; FxSiOy; In situ NF3 plasma pretreatment; Selectivity loss; Silanol (SiOH)

Indexed keywords

EID: 3643063520     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6555     Document Type: Article

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