Experimental drain I-V characteristics of power MOS transistors and the nature of reverse leakage current of oxide passivated PN junctions

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 2006, Pages 305-308

  Obreja, Vasile V N ^a   Podaru, Cecilia ^a   Manea, Elena ^a   Coraci, Antonie ^a   Codreanu, Cecilia ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTOR JUNCTIONS; TEMPERATURE MEASUREMENT;

DRAIN ELECTRICAL CHARACTERISTICS; JUNCTION TEMPERATURE; OXIDE PASSIVATED PN JUNCTIONS;

MOSFET DEVICES;

EID: 36348988194     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2006.284004     Document Type: Conference Paper

References (6)