Polarized transmittance-reflectance scatterometry measurements of 2D trench dimensions on phase-shift masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6607, Issue PART 1, 2007, Pages

  Lam, John C ^a   Gray, Alexander ^b   Howell, Rafael ^a   Chen, Stanley ^a  

^a N and K Technology Inc   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

2D trench structures; Critical dimensions; Optical scatterometry; RCWA

Indexed keywords

2D TRENCH STRUCTURES; CRITICAL DIMENSIONS; OPTICAL SCATTEROMETRY; RCWA;

INSPECTION; LIGHT POLARIZATION; OPACITY; PHASE SHIFT; REFLECTION;

MASKS;

EID: 36249024138     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.728949     Document Type: Conference Paper

References (4)

1. Forouhi, A. R. and Bloomer, I. (1986). "Optical dispersion relations for amorphous semiconductors and amorphous dielectrics." Physical Review B 34(10): 7018.
2. Forouhi, A. R. and Bloomer, I. (1988). "Optical properties of crystalline semiconductors and dielectrics." Physical Review B 38(3): 1865.
3. Gray, A., Lam, J.C., et al. (2006). Novel technique for critical dimension measurements of phase-shift masks using broadband transmittance spectra in conjunction with RCWA. Photomask Technology 2006, Monterey, CA, USA, SPIE.
4. Moharam, M.G., Grann, E.B., et al. (1995). "Formulation for stable and efficient implementation of the rigorous coupled-wave analysis of binary gratings," J. Opt. Soc. Am. A 12, 1068