Switching behaviour and noise of soft breakdown current in ultra-thin gate oxides

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 500-503

  Cester, A ^a   Paccagnella, A ^a   Bandiera, L ^a   Ghidini, G ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SOLID STATE DEVICES;

CONSTANT CURRENT STRESS; CURRENT NOISE; POISSON PROCESS; RANDOM TELEGRAPH SIGNAL NOISE; SOFT BREAKDOWN; TIME CONSTANTS; TIME-PERIODS; ULTRA THIN GATE OXIDE;

GATES (TRANSISTOR);

EID: 36248929228     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194824     Document Type: Conference Paper

References (6)

1. E. Miranda, et al., Soft Breakdown Conduction in Ultrathin (3 5nm) Gate Dielectrics , IEEE Trans. Electron Devices, Vol. 47, 2000, pp. 82-88.
2. K. Sakakibara, et al., A Quantitative Analysis of Stress Induced Excess Current (SIEC) in SiO2 films , IEEE-IRPS, 1996, pp. 100-107.
3. O. Brire, et al. , Random Telegraph Signal in the Quasi-Breakdown Current of MOS Capacitors , ESSDERC, 1996, pp. 759-762.
4. T. Sakura, et al., A detailed study of Soft-and Pre-Soft-Breakdown in small geometry MOS structure , IEEE-IEDM, 1998, pp. 183-186.
5. G.B. Alers, et al. , Trap Assisted Tunneling as a Mechanism of Degradation and Noise in 2-5 nm Oxides , IEEE-IRPS, 1998, pp. 76-79.
6. M. Depas, et al., Soft Breakdown of Ultra-Thin Gate Oxide Layers , IEEE Trans. Electron Devices, Vol. 43, 1996, pp. 1499-1504.