Numerical modeling study of the unipolar accumulation transistor

Applied Physics Letters

Volumn 91, Issue 19, 2007, Pages

  Fonash, Stephen J ^a   Iqbal, Md Mash Hud ^b   Udrea, Florin ^b   Migliorato, Piero ^b  

^a The Pennsylvania State University   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; NUMERICAL METHODS; OHMIC CONTACTS; THRESHOLD VOLTAGE;

ACCUMULATION METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (AMOSFET); GATE CAPACITANCE; NANOSCALE DEPTH DIMENSION; SATURATION CURRENTS;

MOSFET DEVICES;

EID: 36049050452     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2805630     Document Type: Article

References (3)

1. Y. Shan, S. Ashok, and S. J. Fonash, Appl. Phys. Lett. 91, 093518 (2007).
2. S. Sze, Physics of Semiconductor Devices (Wiley-Interscience, New York, 1981).
3. TCAD-Sentaurus User Manual, Version X-2005.10, Synopsys, Inc., 2005, Mountain View, Ca.