High-power 1.3-μm quantum-dot superluminescent light-emitting diode grown by molecular beam epitaxy

IEEE Photonics Technology Letters

Volumn 19, Issue 2, 2007, Pages 109-111

  Ray, S K ^a   Choi, T L ^a   Groom, K M ^a   Liu, H Y ^a   Hopkinson, M ^a   Hogg, R A ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Dot in well (DWELL); Quantum dots (QDs); Superluminescent light emitting diode (SLED)

Indexed keywords

DOT IN WELLS; DRIVE CURRENTS; EXTERNAL EFFICIENCY; GAAS; HIGH-POWER; INAS; LASER DEVICE; LOW-TEMPERATURE GAAS; QUANTUM DOTS; SPACER LAYER; SUPERLUMINESCENT DIODE;

CRYSTAL GROWTH; DIODES; GALLIUM ALLOYS; GALLIUM ARSENIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 36049045077     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.889099     Document Type: Article

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