Transparent conductive Cu-doped ZnSe film deposited at room temperature using compound sources followed by laser annealing

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 36-40, 2007, Pages

  Orita, Masahiro ^a   Narushima, Takashi ^a   Yanagita, Hiroaki ^a  

^a HOYA CORPORATION   (Japan)

Author keywords

Diode; Glass substrate; Impurity band; p type; Semiconductor; Transparent; Wide gap

Indexed keywords

COPPER; LASER BEAMS; OPACITY; SEMICONDUCTOR DOPING; TRANSPARENCY; ZINC COMPOUNDS;

GLASS SUBSTRATE; IMPURITY BAND; TURN-ON VOLTAGE; ZINC BLENDE;

THIN FILMS;

EID: 36048983379     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L976     Document Type: Article

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