Electrical transport properties of (Cox Al1-x) 2 O3-v oxide magnetic semiconductor and corresponding Co- Al2 O3 granular films

Applied Physics Letters

Volumn 91, Issue 1, 2007, Pages

  Tian, Y F ^a   Zhang, Y P ^a   Yan, Shi Shen ^a   Liu, G L ^a   Chen, Y X ^a   Mei, L M ^a   Ji, G ^b   Zhang, Z ^b  

^a SHANDONG UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT PROPERTIES; GRANULAR FILMS; IMPURITY BAND; INTERGRAIN TUNNELLING;

ANNEALING; ENERGY GAP; GRANULAR MATERIALS; MAGNETORESISTANCE; THIN FILMS;

MAGNETIC SEMICONDUCTORS;

EID: 36048934016     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2754645     Document Type: Article

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