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Physical Review B

Volumn 20, Issue 12, 1979, Pages 4839-4846

Hydrogen evolution and defect creation in amorphous Si: H alloys

(4) Biegelsen, D K a Street, R A a Tsai, C C a Knights, J C a

a PALO ALTO RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35949039833 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.20.4839 Document Type: Article

Times cited : (219)

References (18)

1
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2
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3
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6
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- Ref. 1
- Fritzsche, H.¹

7
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- Brodsky, M.H.¹ Frisch, M.A.² Ziegler, J.F.³ Lanford, W.A.⁴

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- (1979) J. Appl. Phys. , vol.50 , pp. 5238
- McMillan, J.A.¹ Peterson, E.M.²

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10
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- Ref. 1
- Stuke, J.¹

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- Philos. Mag. B
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- (1979) J. Appl. Phys. , vol.50 , pp. 3366
- Fritzsche, H.¹ Tanielian, M.² Tsai, C.C.³ Gaczi, P.⁴

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- Matysik, K.J.¹ Mogab, C.J.² Bagley, B.G.³

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- private communication
- Matysik, K.J.¹ Mogab, C.J.² Bagley, B.G.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.