Mobility anisotropy of electrons in inversion layers on oxidized silicon surfaces

Physical Review B

Volumn 4, Issue 6, 1971, Pages 1950-1960

  Satô, Tai ^a   Takeishi, Yoshiyuki ^a   Hara, Hisashi ^a   Okamoto, Yoshihiko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35949038635     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.4.1950     Document Type: Article

References (19)

1. Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise inp-Type Inversion Layers on Oxidized Silicon Surfaces
2. Effect of the Crystal Orientation upon Electron Mobility at the Si-SiO2Interface
3. Determination of interface-state density and mobility ratio in silicon surface inversion layers