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Volumn 37, Issue 9, 1988, Pages 4656-4663

Preparation and melting of amorphous silicon by molecular-dynamics simulations

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Indexed keywords


EID: 35949013012     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.37.4656     Document Type: Article
Times cited : (184)

References (33)
  • 5
    • 84927866819 scopus 로고    scopus 로고
    • See reviews by G. Lucovsky and T. M. Hayes, in Amorphous Semiconductors, Ref. 1, p. 215; M. A. Paesler and D. E. Sayers, in Tetrahedrally-Bonded Amorphous Semiconductors, Ref. 2, p. 37.
  • 12
    • 84927866818 scopus 로고    scopus 로고
    • See articles in Computer-Based Microscopic Description of the Structures and Properties of Materials, Vol. 63 of Material Research Society Symposium Proceeding, edited by J. Broughton, W. Krakow, and S. T. Pantelides (MRS, Providence, RI, 1985).
  • 24
    • 84927866816 scopus 로고    scopus 로고
    • Physics of Structurally Disordered Solids, edited by S. S. Mitra (Plenum, New York, 1976). See D. Turnbull, p. 1, and references therein.
  • 26
    • 84927866815 scopus 로고    scopus 로고
    • As seen from Eq. (1c) the three-body terms add a positive contribution to the potential energy, which vanishes for perfect tetrahedral bonding. Thus states with a lower degree of tetrahedral order are characterized by a higher value of V3, and may be destabilized by increasing the weight of this term in the potential.
  • 31
    • 84927866812 scopus 로고    scopus 로고
    • B. G. Bagley and H. S. Chen, in Laser-Solid Interactions and Laser Processing, Ref. 28, pg. 97.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.